Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane

Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane

The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good...

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Main Authors: Hashim, Abdul Manaf, Yasui, Kanji
Format: Conference or Workshop Item
Language:English
Published: 2006
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/7630/1/Hashim_Abdul_Manaf_2006_Low_Temperature_Heteroepitaxial_Growth_3C-SiC_Si.pdf
http://eprints.utm.my/id/eprint/7630/
http://dx.doi.org/10.1109/SMELEC.2006.380713
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Institution: Universiti Teknologi Malaysia
Language: English
id my.utm.7630
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spelling my.utm.76302010-06-01T15:54:07Z http://eprints.utm.my/id/eprint/7630/ Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane Hashim, Abdul Manaf Yasui, Kanji TK Electrical engineering. Electronics Nuclear engineering The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good crystallinity and crystal orientation were successfully grown at 1100-1200°C. The crystallinity and the crystal orientation of SiC films grown at large dilution rate of above 200 and growth pressure of 0.3 - 0.7 Torr were better than those grown at small dilution rate and high growth pressure. Under large dilution rate, large amount of hydrogen radicals can be generated. It is speculated that excessive carbon atoms or weak bonds formed in SiC films were effectively extracted by the large amount of hydrogen radicals. 2006 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/7630/1/Hashim_Abdul_Manaf_2006_Low_Temperature_Heteroepitaxial_Growth_3C-SiC_Si.pdf Hashim, Abdul Manaf and Yasui, Kanji (2006) Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane. In: IEEE International Conference on Semiconductor Electronics,Proceedings, ICSE, 29 Oct- 1 Dec 2006, Kuala Lumpur,Malaysia. http://dx.doi.org/10.1109/SMELEC.2006.380713
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Hashim, Abdul Manaf
Yasui, Kanji
Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane
description The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good crystallinity and crystal orientation were successfully grown at 1100-1200°C. The crystallinity and the crystal orientation of SiC films grown at large dilution rate of above 200 and growth pressure of 0.3 - 0.7 Torr were better than those grown at small dilution rate and high growth pressure. Under large dilution rate, large amount of hydrogen radicals can be generated. It is speculated that excessive carbon atoms or weak bonds formed in SiC films were effectively extracted by the large amount of hydrogen radicals.
format Conference or Workshop Item
author Hashim, Abdul Manaf
Yasui, Kanji
author_facet Hashim, Abdul Manaf
Yasui, Kanji
author_sort Hashim, Abdul Manaf
title Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane
title_short Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane
title_full Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane
title_fullStr Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane
title_full_unstemmed Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane
title_sort low temperature heteroepitaxial growth of 3c-sic on si substrates by rapid thermal triode plasma cvd using dimethylsilane
publishDate 2006
url http://eprints.utm.my/id/eprint/7630/1/Hashim_Abdul_Manaf_2006_Low_Temperature_Heteroepitaxial_Growth_3C-SiC_Si.pdf
http://eprints.utm.my/id/eprint/7630/
http://dx.doi.org/10.1109/SMELEC.2006.380713
_version_ 1643644815864233984

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