Characteristics of microring circuit using plasmonic island driven electron mobility

The plasmonic electronic component consists of the stacked layers of silicon–graphene–gold materials can be integrated with the driven group velocity system, which is nonlinear microring resonator. This determines the suitable driven velocity in controlling the side ring phase modulators. In such a...

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Main Authors: Pornsuwancharoen, N., Youplao, P., Aziz, M. A., Ali, J., Singh, G., Amiri, I. S., Punthawanunt, S., Yupapin, P.
Format: Article
Published: Springer Verlag 2018
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Online Access:http://eprints.utm.my/id/eprint/84597/
http://dx.doi.org/10.1007/s00542-018-3774-9
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Institution: Universiti Teknologi Malaysia
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spelling my.utm.845972020-02-27T03:20:34Z http://eprints.utm.my/id/eprint/84597/ Characteristics of microring circuit using plasmonic island driven electron mobility Pornsuwancharoen, N. Youplao, P. Aziz, M. A. Ali, J. Singh, G. Amiri, I. S. Punthawanunt, S. Yupapin, P. QA75 Electronic computers. Computer science The plasmonic electronic component consists of the stacked layers of silicon–graphene–gold materials can be integrated with the driven group velocity system, which is nonlinear microring resonator. This determines the suitable driven velocity in controlling the side ring phase modulators. In such a case, the proposed system can give the advantage of the greater switching speed and the hybrid function between electronic and light signals. The obtained I–V output characteristics of the transmitted results have shown that the proposed circuit can function to be the electronic devices with very high stability. Springer Verlag 2018-08 Article PeerReviewed Pornsuwancharoen, N. and Youplao, P. and Aziz, M. A. and Ali, J. and Singh, G. and Amiri, I. S. and Punthawanunt, S. and Yupapin, P. (2018) Characteristics of microring circuit using plasmonic island driven electron mobility. Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, 24 (8). pp. 3573-3577. ISSN 0946-7076 http://dx.doi.org/10.1007/s00542-018-3774-9
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic QA75 Electronic computers. Computer science
spellingShingle QA75 Electronic computers. Computer science
Pornsuwancharoen, N.
Youplao, P.
Aziz, M. A.
Ali, J.
Singh, G.
Amiri, I. S.
Punthawanunt, S.
Yupapin, P.
Characteristics of microring circuit using plasmonic island driven electron mobility
description The plasmonic electronic component consists of the stacked layers of silicon–graphene–gold materials can be integrated with the driven group velocity system, which is nonlinear microring resonator. This determines the suitable driven velocity in controlling the side ring phase modulators. In such a case, the proposed system can give the advantage of the greater switching speed and the hybrid function between electronic and light signals. The obtained I–V output characteristics of the transmitted results have shown that the proposed circuit can function to be the electronic devices with very high stability.
format Article
author Pornsuwancharoen, N.
Youplao, P.
Aziz, M. A.
Ali, J.
Singh, G.
Amiri, I. S.
Punthawanunt, S.
Yupapin, P.
author_facet Pornsuwancharoen, N.
Youplao, P.
Aziz, M. A.
Ali, J.
Singh, G.
Amiri, I. S.
Punthawanunt, S.
Yupapin, P.
author_sort Pornsuwancharoen, N.
title Characteristics of microring circuit using plasmonic island driven electron mobility
title_short Characteristics of microring circuit using plasmonic island driven electron mobility
title_full Characteristics of microring circuit using plasmonic island driven electron mobility
title_fullStr Characteristics of microring circuit using plasmonic island driven electron mobility
title_full_unstemmed Characteristics of microring circuit using plasmonic island driven electron mobility
title_sort characteristics of microring circuit using plasmonic island driven electron mobility
publisher Springer Verlag
publishDate 2018
url http://eprints.utm.my/id/eprint/84597/
http://dx.doi.org/10.1007/s00542-018-3774-9
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