Temperature analysis of ZnO/p-Si heterojunction using thermionic emission model

Two ZnO/p-Si heterojunction diode structures are modeled based on thermionic emission in numerical computation environment, and their current-voltage characteristics were validated in Spice with 500 Ω and 5 kΩ load resistance. Both structures are differentiated based on thickness, metal size, and do...

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Main Authors: Hasim, H., Sultan, S. M., Mohamad, A.
Format: Article
Language:English
Published: Science Publishing Corporation Inc. 2018
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Online Access:http://eprints.utm.my/id/eprint/85218/1/SMSultan2018_TemperatureAnalysisofZnOpSiHeterojunctionUsing.pdf
http://eprints.utm.my/id/eprint/85218/
https://www.sciencepubco.com/index.php/ijet/article/view/21533
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Institution: Universiti Teknologi Malaysia
Language: English
id my.utm.85218
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spelling my.utm.852182020-03-11T06:57:17Z http://eprints.utm.my/id/eprint/85218/ Temperature analysis of ZnO/p-Si heterojunction using thermionic emission model Hasim, H. Sultan, S. M. Mohamad, A. TK Electrical engineering. Electronics Nuclear engineering Two ZnO/p-Si heterojunction diode structures are modeled based on thermionic emission in numerical computation environment, and their current-voltage characteristics were validated in Spice with 500 Ω and 5 kΩ load resistance. Both structures are differentiated based on thickness, metal size, and doping concentration. Parameters extracted such as barrier height, ideality factor, activation energy, series resistance, and shunt resistance are studied towards temperature-dependent study from 300 K to 673 K. Structure 1 proved to be exhibiting lower barrier height , series resistance and shunt resistance while structure 2 has lower ideality factor, activation energy, and turn on voltage. Modeling the ideality factor of structure 2 predicts a value of 0.25 at 673 K. Meanwhile, the turn on voltage of structure 2 is shown to achieve 0.8 V at room temperature. Barrier heights for structure 1 are reported to increase from 0.68 eV to 1.17 eV when temperature varies from 300 K to 673 K but series resistance and shunt resistance decreases with temperature. Science Publishing Corporation Inc. 2018 Article PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/85218/1/SMSultan2018_TemperatureAnalysisofZnOpSiHeterojunctionUsing.pdf Hasim, H. and Sultan, S. M. and Mohamad, A. (2018) Temperature analysis of ZnO/p-Si heterojunction using thermionic emission model. International Journal of Engineering & Technology, 7 (4). pp. 3022-3025. ISSN 2227-524X https://www.sciencepubco.com/index.php/ijet/article/view/21533
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Hasim, H.
Sultan, S. M.
Mohamad, A.
Temperature analysis of ZnO/p-Si heterojunction using thermionic emission model
description Two ZnO/p-Si heterojunction diode structures are modeled based on thermionic emission in numerical computation environment, and their current-voltage characteristics were validated in Spice with 500 Ω and 5 kΩ load resistance. Both structures are differentiated based on thickness, metal size, and doping concentration. Parameters extracted such as barrier height, ideality factor, activation energy, series resistance, and shunt resistance are studied towards temperature-dependent study from 300 K to 673 K. Structure 1 proved to be exhibiting lower barrier height , series resistance and shunt resistance while structure 2 has lower ideality factor, activation energy, and turn on voltage. Modeling the ideality factor of structure 2 predicts a value of 0.25 at 673 K. Meanwhile, the turn on voltage of structure 2 is shown to achieve 0.8 V at room temperature. Barrier heights for structure 1 are reported to increase from 0.68 eV to 1.17 eV when temperature varies from 300 K to 673 K but series resistance and shunt resistance decreases with temperature.
format Article
author Hasim, H.
Sultan, S. M.
Mohamad, A.
author_facet Hasim, H.
Sultan, S. M.
Mohamad, A.
author_sort Hasim, H.
title Temperature analysis of ZnO/p-Si heterojunction using thermionic emission model
title_short Temperature analysis of ZnO/p-Si heterojunction using thermionic emission model
title_full Temperature analysis of ZnO/p-Si heterojunction using thermionic emission model
title_fullStr Temperature analysis of ZnO/p-Si heterojunction using thermionic emission model
title_full_unstemmed Temperature analysis of ZnO/p-Si heterojunction using thermionic emission model
title_sort temperature analysis of zno/p-si heterojunction using thermionic emission model
publisher Science Publishing Corporation Inc.
publishDate 2018
url http://eprints.utm.my/id/eprint/85218/1/SMSultan2018_TemperatureAnalysisofZnOpSiHeterojunctionUsing.pdf
http://eprints.utm.my/id/eprint/85218/
https://www.sciencepubco.com/index.php/ijet/article/view/21533
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