A preliminary study on optimizing the in-lab reclamation process parameters of used transformer oils using the taguchi method
This paper presents fabrication of reduced graphene oxide (rGO)/silicon (Si) back-to-back Schottky diode (BBSD) through graphene oxide (GO) thin film formation by vacuum filtration and chemical reduction of the film via ascorbic acid. In order to understand and assess the viability of these two proc...
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Online Access: | http://eprints.utm.my/id/eprint/85885/1/ZulkarnainANoorden2018_APreliminaryStudyonOptimizingtheIn-LabReclamation.pdf http://eprints.utm.my/id/eprint/85885/ http://dx.doi.org/10.11591/ijeecs.v10.i3.pp1090-1097 |
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my.utm.858852020-07-30T07:38:53Z http://eprints.utm.my/id/eprint/85885/ A preliminary study on optimizing the in-lab reclamation process parameters of used transformer oils using the taguchi method Ab. Ghani, Sharin Ahmad Noorden, Zulkarnain Muhamad, Nor Asiah Chairul, Imran Sutan Mohd. Khalid, Muhammad Asyraf TK Electrical engineering. Electronics Nuclear engineering This paper presents fabrication of reduced graphene oxide (rGO)/silicon (Si) back-to-back Schottky diode (BBSD) through graphene oxide (GO) thin film formation by vacuum filtration and chemical reduction of the film via ascorbic acid. In order to understand and assess the viability of these two processes, process condition and parameters were varied and analyzed. It was confirmed that the GO film thickness could be controlled by changing GO dispersion volume and concentration. Filtration of 200 ml of 0.4 ppm GO dispersion produced average film thickness of 53 nm. As for the reduction process, long duration was required to produce higher reduction degree. rGO film that underwent two times reduction at before and after transfer process with concentrated ascorbic acid gave the lowest sheet resistance of 3.58 MΩ/sq. In the final part of the paper, result of the BBSD device fabrication and current-voltage characterization were shown. The formed two rGO/Si Schottky junctions in the BBSD gave barrier height of 0.63 and 0.7 eV. The presented results confirmed the viability of fabricating rGO-based device using a simple method and without requirement of sophisticated equipment. Institute of Advanced Engineering and Science 2018-06 Article PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/85885/1/ZulkarnainANoorden2018_APreliminaryStudyonOptimizingtheIn-LabReclamation.pdf Ab. Ghani, Sharin and Ahmad Noorden, Zulkarnain and Muhamad, Nor Asiah and Chairul, Imran Sutan and Mohd. Khalid, Muhammad Asyraf (2018) A preliminary study on optimizing the in-lab reclamation process parameters of used transformer oils using the taguchi method. Indonesian Journal of Electrical Engineering and Computer Science, 10 (3). pp. 1090-1097. ISSN 2502-4752 http://dx.doi.org/10.11591/ijeecs.v10.i3.pp1090-1097 |
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TK Electrical engineering. Electronics Nuclear engineering Ab. Ghani, Sharin Ahmad Noorden, Zulkarnain Muhamad, Nor Asiah Chairul, Imran Sutan Mohd. Khalid, Muhammad Asyraf A preliminary study on optimizing the in-lab reclamation process parameters of used transformer oils using the taguchi method |
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This paper presents fabrication of reduced graphene oxide (rGO)/silicon (Si) back-to-back Schottky diode (BBSD) through graphene oxide (GO) thin film formation by vacuum filtration and chemical reduction of the film via ascorbic acid. In order to understand and assess the viability of these two processes, process condition and parameters were varied and analyzed. It was confirmed that the GO film thickness could be controlled by changing GO dispersion volume and concentration. Filtration of 200 ml of 0.4 ppm GO dispersion produced average film thickness of 53 nm. As for the reduction process, long duration was required to produce higher reduction degree. rGO film that underwent two times reduction at before and after transfer process with concentrated ascorbic acid gave the lowest sheet resistance of 3.58 MΩ/sq. In the final part of the paper, result of the BBSD device fabrication and current-voltage characterization were shown. The formed two rGO/Si Schottky junctions in the BBSD gave barrier height of 0.63 and 0.7 eV. The presented results confirmed the viability of fabricating rGO-based device using a simple method and without requirement of sophisticated equipment. |
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Article |
author |
Ab. Ghani, Sharin Ahmad Noorden, Zulkarnain Muhamad, Nor Asiah Chairul, Imran Sutan Mohd. Khalid, Muhammad Asyraf |
author_facet |
Ab. Ghani, Sharin Ahmad Noorden, Zulkarnain Muhamad, Nor Asiah Chairul, Imran Sutan Mohd. Khalid, Muhammad Asyraf |
author_sort |
Ab. Ghani, Sharin |
title |
A preliminary study on optimizing the in-lab reclamation process parameters of used transformer oils using the taguchi method |
title_short |
A preliminary study on optimizing the in-lab reclamation process parameters of used transformer oils using the taguchi method |
title_full |
A preliminary study on optimizing the in-lab reclamation process parameters of used transformer oils using the taguchi method |
title_fullStr |
A preliminary study on optimizing the in-lab reclamation process parameters of used transformer oils using the taguchi method |
title_full_unstemmed |
A preliminary study on optimizing the in-lab reclamation process parameters of used transformer oils using the taguchi method |
title_sort |
preliminary study on optimizing the in-lab reclamation process parameters of used transformer oils using the taguchi method |
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Institute of Advanced Engineering and Science |
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2018 |
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http://eprints.utm.my/id/eprint/85885/1/ZulkarnainANoorden2018_APreliminaryStudyonOptimizingtheIn-LabReclamation.pdf http://eprints.utm.my/id/eprint/85885/ http://dx.doi.org/10.11591/ijeecs.v10.i3.pp1090-1097 |
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