Crystallinity and morphology of silicon carbide thin films deposited using very high frequency plasma enchanced chemical vapor deposition
Conventional plasma enchanced chemical vapor deposition (PECVD) has been widely used since decades to deposit silicon carbide (SiC) thin film. However, lower RF frequency tends to produce hydrogenated amorphous silicon carbide (a-SiC:H) and poly-crystalline (p-SiC) type of films. This work aims to i...
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| Main Authors: | , , |
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| Format: | Article |
| Published: |
Science Publishing Corporation Inc.
2018
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/86632/ https://www.sciencepubco.com/index.php/ijet/article/view/22613 |
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| Institution: | Universiti Teknologi Malaysia |
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