Modeling of inversion and centroid charges of long channel strained-silicon surrounding gate mosfets incorporating quantum effects

• المؤلفون الرئيسيون: Hamid, F. K. A., Johari, Z., Alias, N. E., Lim, W. H., Sultan, S. M., Leong, W. S., Ismail, R.
• التنسيق: مقال
• منشور في: Institute of Physics Publishing 2020
• الموضوعات: TK Electrical engineering. Electronics Nuclear engineering
• الوصول للمادة أونلاين: http://eprints.utm.my/id/eprint/87031/; http://www.dx.doi.org/10.1088/1361-6641/ab5d90

This paper presents a modeling approach for strained silicon surrounding gate MOSFETs. The main contribution of this work is the simplification of the charge model by using an explicit solution technique which includes the strained and quantum effects. Quantum effects are essential due to extreme sc...