A review of the top of the barrier nanotransistor models for semiconductor nanomaterials

• Main Authors: Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., Tan, M. L. P.
• Format: Article
• Published: Elsevier Ltd. 2020
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/87902/; http://www.dx.doi.org/10.1016/j.spmi.2020.106429
• Institution: Universiti Teknologi Malaysia

The modelling and simulation of low-dimensional nanoelectronic devices is important, because the semiconductor industry has scaled transistors down to the sub-10nm regime. The top of the barrier (ToB) transistor model has been developed and used to model transistors that are composed of various semi...