Effect of gap width on electron transport through quantum point contact in hBN/graphene/hBN in the quantum hall regime

Effect of gap width on electron transport through quantum point contact in hBN/graphene/hBN in the quantum hall regime

This study investigates quantized electron transport in high-mobility quantum point contact (QPC) devices in hBN/graphene/hBN in the quantum Hall regime. This study primarily focuses on the effect of the gap width of split gates on edge-channel manipulations, which defines the QPC structure and its...

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Bibliographic Details
Main Authors: Ahmad, Nurul Fariha, Iwasaki, Takuya, Komatsu, Katsuyoshi, Watanabe, Kenji, Taniguchi, Takashi, Mizuta, Hiroshi, Wakayama, Yutaka, Hashim, Abdul Manaf, Morita, Yoshifumi, Moriyama, Satoshi, Nakaharai, Shu
Format: Article
Published: American Institute of Physics Inc. 2019
Subjects:
TA Engineering (General). Civil engineering (General)
Online Access:http://eprints.utm.my/id/eprint/87916/
http://dx.doi.org/10.1063/1.5067296
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Institution: Universiti Teknologi Malaysia

Internet

http://eprints.utm.my/id/eprint/87916/
http://dx.doi.org/10.1063/1.5067296

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