Properties of rapid thermal oxidized p-type germanium and its metal-oxide-semiconductor capacitor structure

• Main Authors: Ab. Manaf, Norani, Hashim, Abdul Manaf
• Format: Conference or Workshop Item
• Language: English
• Published: 2019
• Subjects: TA Engineering (General). Civil engineering (General)
• Online Access: http://eprints.utm.my/id/eprint/89652/1/NoraniAbManaf2019_PropertiesofRapidThermalOxidized.pdf; http://eprints.utm.my/id/eprint/89652/; http://dx.doi.org/10.1016/j.matpr.2018.12.070
• Institution: Universiti Teknologi Malaysia

In this study, p-type Ge surface was oxidized using a rapid thermal technique at temperatures of 380°C, 400°C, 450°C and 500°C, and annealing time of 5 min, 10 min and 15 min in oxygen (O2) with fixed flow rate of 1.0 l/min. It was found that the surface roughness of germanium oxide (GeOx) decreases...