Potassium doping effect on Cu2ZnSn(S,Se)4 thin film absorber layer deposited via spray pyrolysis
This article reports on the role of potassium (K) as dopant in Cu2ZnSn(S,Se)4, CZTSSe thin film in context of optical properties. Thin film precursor solution is prepared in dimethyl sulfoxide (DMSO) solvent, and doped by K with six different concentrations. The prepared solution are deposited on he...
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my.utm.926972021-10-28T10:13:40Z http://eprints.utm.my/id/eprint/92697/ Potassium doping effect on Cu2ZnSn(S,Se)4 thin film absorber layer deposited via spray pyrolysis Salleh, Mohd. Shahril Chaudhary, Kashif Tufail Mazalan, Elham Ali, Jalil QC Physics This article reports on the role of potassium (K) as dopant in Cu2ZnSn(S,Se)4, CZTSSe thin film in context of optical properties. Thin film precursor solution is prepared in dimethyl sulfoxide (DMSO) solvent, and doped by K with six different concentrations. The prepared solution are deposited on heated soda lime glass (SLG) substrates using spray pyrolysis technique, followed by selenization process using three-step temperature approach. UV-Visible spectra show high absorption coefficient, α, more than 104cm-1 and bandgaps in narrow range 0.98eV to 1.10eV. X-ray diffractograms show that all samples exhibit kesterite structure with preferential orientation along (112) orientation. Field Emission Scanning Electron Microscopy was used to determine the morphologies of the K-doped CZTSSe thin films. 1.5 mol % of K has shown better characteristics as an absorber layer among other tested samples. 2020 Conference or Workshop Item PeerReviewed Salleh, Mohd. Shahril and Chaudhary, Kashif Tufail and Mazalan, Elham and Ali, Jalil (2020) Potassium doping effect on Cu2ZnSn(S,Se)4 thin film absorber layer deposited via spray pyrolysis. In: 30th Regional Conference of Solid State Science and Technology, RCSSST 2018, 6 - 8 November 2019, Melaka, Malaysia. http://dx.doi.org/10.4028/www.scientific.net/SSP.307.201 |
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QC Physics Salleh, Mohd. Shahril Chaudhary, Kashif Tufail Mazalan, Elham Ali, Jalil Potassium doping effect on Cu2ZnSn(S,Se)4 thin film absorber layer deposited via spray pyrolysis |
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This article reports on the role of potassium (K) as dopant in Cu2ZnSn(S,Se)4, CZTSSe thin film in context of optical properties. Thin film precursor solution is prepared in dimethyl sulfoxide (DMSO) solvent, and doped by K with six different concentrations. The prepared solution are deposited on heated soda lime glass (SLG) substrates using spray pyrolysis technique, followed by selenization process using three-step temperature approach. UV-Visible spectra show high absorption coefficient, α, more than 104cm-1 and bandgaps in narrow range 0.98eV to 1.10eV. X-ray diffractograms show that all samples exhibit kesterite structure with preferential orientation along (112) orientation. Field Emission Scanning Electron Microscopy was used to determine the morphologies of the K-doped CZTSSe thin films. 1.5 mol % of K has shown better characteristics as an absorber layer among other tested samples. |
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Conference or Workshop Item |
author |
Salleh, Mohd. Shahril Chaudhary, Kashif Tufail Mazalan, Elham Ali, Jalil |
author_facet |
Salleh, Mohd. Shahril Chaudhary, Kashif Tufail Mazalan, Elham Ali, Jalil |
author_sort |
Salleh, Mohd. Shahril |
title |
Potassium doping effect on Cu2ZnSn(S,Se)4 thin film absorber layer deposited via spray pyrolysis |
title_short |
Potassium doping effect on Cu2ZnSn(S,Se)4 thin film absorber layer deposited via spray pyrolysis |
title_full |
Potassium doping effect on Cu2ZnSn(S,Se)4 thin film absorber layer deposited via spray pyrolysis |
title_fullStr |
Potassium doping effect on Cu2ZnSn(S,Se)4 thin film absorber layer deposited via spray pyrolysis |
title_full_unstemmed |
Potassium doping effect on Cu2ZnSn(S,Se)4 thin film absorber layer deposited via spray pyrolysis |
title_sort |
potassium doping effect on cu2znsn(s,se)4 thin film absorber layer deposited via spray pyrolysis |
publishDate |
2020 |
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http://eprints.utm.my/id/eprint/92697/ http://dx.doi.org/10.4028/www.scientific.net/SSP.307.201 |
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