Size effects of poly-si formed by laser annealing with periodic intensity distribution on the tft characteristics

• Main Authors: Mizutani, A., Hamano, F., Nakamura, D., Goto, T., Aid, S. R., Ikenoue, H.
• Format: Article
• Language: English
• Published: Institute of Electrical and Electronics Engineers Inc. 2021
• Subjects: T Technology (General)
• Online Access: http://eprints.utm.my/id/eprint/95136/1/SitiRahmahAid2021_SizeEffectsofPolySiFormed.pdf; http://eprints.utm.my/id/eprint/95136/; http://dx.doi.org/10.1109/JEDS.2021.3094795
• Institution: Universiti Teknologi Malaysia

Currently, low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs), which are characterized by high mobility of electrons, are fabricated by excimer laser annealing. High mobility in low-temperature polycrystalline silicon is achieved by controlling the grain size to approximatel...