The effect of MOSFET second-order nonlinearity on active inductor-based oscillators
Second-order nonlinearity of the MOSFET has significant impact on active inductor (AI) based oscillators, regardless of whether they are single-ended or differential. By using Taylor series expansion, this paper shows that second-order nonlinearity of the MOSFET will cause a shift in the DC biasing...
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| Main Authors: | , , |
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| Format: | Book Section |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineering (IEEE)
2007
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/9604/1/AbuKhariA%27ain2007_TheEffectOfMOSFETSecond.pdf http://eprints.utm.my/id/eprint/9604/ http://dx.doi.org/10.1109/APACE.2007.4603974 |
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| Institution: | Universiti Teknologi Malaysia |
| Language: | English |
| Summary: | Second-order nonlinearity of the MOSFET has significant impact on active inductor (AI) based oscillators, regardless of whether they are single-ended or differential. By using Taylor series expansion, this paper shows that second-order nonlinearity of the MOSFET will cause a shift in the DC biasing of an AI-based oscillator, depending on oscillation amplitude. The DC bias shift results in a change of the transistor transconductance and parasitic components from their original value, which will affect the oscillator resonance frequency. This explains why a small-signal S-parameter simulation is not sufficient to accurately predict the oscillation frequency and tuning range of AI-based oscillators, even at moderate oscillation amplitudes. |
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