A gain boosting single stage cascode LNA for millimeter-wave applications
This paper presents the design of 60 GHz low noise amplifier (LNA) aimed at realizing IEEE 802.11ad standard using 0.13-μm RF CMOS technology. Single stage cascode with source degeneration topology employing a gain boosting technique is adopted for better isolation and gain performance in millimete...
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| Main Authors: | , , , |
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| Format: | Article |
| Published: |
IEEE Computer Society
2018
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85046335550&doi=10.1109%2fPRIMEASIA.2017.8280376&partnerID=40&md5=5a337d343334d0e5255999efcde22595 http://eprints.utp.edu.my/21780/ |
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| Institution: | Universiti Teknologi Petronas |
| Summary: | This paper presents the design of 60 GHz low noise amplifier (LNA) aimed at realizing IEEE 802.11ad standard using 0.13-μm RF CMOS technology. Single stage cascode with source degeneration topology employing a gain boosting technique is adopted for better isolation and gain performance in millimeter-wave (mmW) frequency band. The simulation of the LNA yields the input reflection coefficient (S11) of -20.75 dB, forward transmission gain (S21) of 7.75 dB, and reverse isolation (£12) of 8.64 dB. The LNA design achieves a noise figure (NF) of 8.9 dB with minimum noise figure (NFmin) of 7.8 dB at 60 GHz. Thus, the design generates power dissipation of 15.17 mW for 1.2 V supply voltage. © 2017 IEEE. |
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