UWB CMOS low noise amplifier for mode 1
This paper presents an ultra-wideband 3.1-4.9 GHz low noise amplifier (LNA) employing a sixth-order bandpass Chebyshev filter. The LNA has been designed using Silterra 0.18 μm CMOS technology at 1.8 V power supply. The simulation shows that the LNA attains a power gain of 14.1 dB with an input refl...
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| Main Authors: | , , |
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| 格式: | Article |
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IEEE Computer Society
2018
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| 在線閱讀: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85046373966&doi=10.1109%2fPRIMEASIA.2017.8280378&partnerID=40&md5=477a5e7150c9ea2b6d30809f6d0ebb7a http://eprints.utp.edu.my/21782/ |
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| 機構: | Universiti Teknologi Petronas |
| 總結: | This paper presents an ultra-wideband 3.1-4.9 GHz low noise amplifier (LNA) employing a sixth-order bandpass Chebyshev filter. The LNA has been designed using Silterra 0.18 μm CMOS technology at 1.8 V power supply. The simulation shows that the LNA attains a power gain of 14.1 dB with an input reflection coefficient less than -10 dB in frequency range of interest, a noise figure of 4.29 dB at 3.8 GHz, gain flatness of ±0.25 dB, a 1 dB compression point of -17.67 dBm, -6.90 dBm for IIP3 and power dissipation of 4.5 mW excluding the buffer stage. © 2017 IEEE. |
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