Enhanced Trench Shielded Power UMOSFET for Single Event Burnout Hardening

Enhanced Trench Shielded Power UMOSFET for Single Event Burnout Hardening

An enhanced structure for Single-Event Burnout (SEB) hardening in trench gate shielded power UMOSFET is presented in this work. The proposed power MOSFET structure includes an n-type region wrapping p+ shielded region underneath the gate trench and adds an n-buffer layer between the epitaxial layer...

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Bibliographic Details
Main Authors: Krishnamurthy, S., Kannan, R., Hussin, F.A., Yahya, E.A.
Format: Conference or Workshop Item
Published: Institute of Electrical and Electronics Engineers Inc. 2019
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85078311992&doi=10.1109%2fRSM46715.2019.8943495&partnerID=40&md5=7c8ac635c0f811653efb271a9f089524
http://eprints.utp.edu.my/23535/
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Institution: Universiti Teknologi Petronas

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https://www.scopus.com/inward/record.uri?eid=2-s2.0-85078311992&doi=10.1109%2fRSM46715.2019.8943495&partnerID=40&md5=7c8ac635c0f811653efb271a9f089524
http://eprints.utp.edu.my/23535/

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