Analysis of band gap in AA and Ab stacked bilayer graphene by Hamiltonian tight binding method

• Main Authors: Junaid, M., Witjaksono, G.
• Format: Conference or Workshop Item
• Published: Institute of Electrical and Electronics Engineers Inc. 2019
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85078200573&doi=10.1109%2fSENSORSNANO44414.2019.8940102&partnerID=40&md5=a9c0058961abfb25af69e85bbf038ed5; http://eprints.utp.edu.my/23538/
• Institution: Universiti Teknologi Petronas

The electronic properties of AA and AB-stacked bilayer graphene has been carefully investigated by the principle of Hamiltonian tight binding model. It is determined that the AA-stacked bilayer graphene not showing any significant response to the change in the applied electric field. However, we fin...