Simulation study of single event effects sensitivity on commercial power MOSFET with single heavy ion radiation
High-frequency semiconductor devices are key components for advanced power electronic system that require fast switching speed. Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is the most famous electronic device that are used in much power electronic system. However, the applicatio...
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| Main Authors: | , , |
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| Format: | Article |
| Published: |
Institute of Advanced Engineering and Science
2019
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85075612054&doi=10.11591%2feei.v8i4.1888&partnerID=40&md5=0363400aadeb1a331a688c83236cf423 http://eprints.utp.edu.my/24846/ |
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| Institution: | Universiti Teknologi Petronas |