ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top elec...

Full description

Saved in:
Bibliographic Details
Main Authors: Isyaku, U.B., Khir, M.H.B.M., Nawi, I.M., Zakariya, M.A., Zahoor, F.
Format: Article
Published: Institute of Electrical and Electronics Engineers Inc. 2021
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85111024999&doi=10.1109%2fACCESS.2021.3098061&partnerID=40&md5=3f182c311c6eb12aeef756a7e40ed14f
http://eprints.utp.edu.my/29493/
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Universiti Teknologi Petronas

Internet

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85111024999&doi=10.1109%2fACCESS.2021.3098061&partnerID=40&md5=3f182c311c6eb12aeef756a7e40ed14f
http://eprints.utp.edu.my/29493/

Similar Items