The role of Al2O3 buffer layer in the growth of aligned CNTs

• Main Authors: K.M., Begam, M.K., Lai, N.M., Mohamed
• Format: Conference or Workshop Item
• Published: 2008
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utp.edu.my/445/1/paper.pdf; http://www.scopus.com/inward/record.url?eid=2-s2.0-45749088120&partnerID=40&md5=df104fefdf4ca33cac18c86f88d19cbc; http://eprints.utp.edu.my/445/
• Institution: Universiti Teknologi Petronas

Carbon nanotube (CNT) can be thought of as a hexagonal network of carbon atoms that has been rolled up to make a seamless cylinder. If they are consisting of one layer, they are termed singled-walled CNTs (SWNTs) while if there are multiple walls, they are called multi-walled CNTs (MWNTs). For most functional devices application, an aligned arrangement of CNTs is desired. Aligned multiwalled carbon nanotubes (MWNTs) have been successfully grown by the inclusion of a buffer layer of oxidized Al. An Al₂O₃ layer has been proven to be an important contributing factor towards obtaining good quality aligned CNTs. In this work, Al is deposited onto the Si wafer using electron beam evaporation and later oxidized by heating in air. A thin layer of iron catalyst is then deposited on top of the oxidized Al layer and annealed at 400°C. The result shows an improvement in the intensity of the graphitization peak (G-band) in the Raman spectra and aligned MWNTs is observed in these samples compared to the ones that have undergone the same process parameter except the Al₂O₃ layer.