Grain boundary resistivity of the percolative conduction regime in ruthenium doped manganates
The excellent agreement with experimental data has been achieved in fitting the resistivity of doped manganate–ruthenates for whole temperature range. The analysis interpreted the resistivity in terms of percolation of carriers through the system of grain boundaries, having been assumed as the condu...
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oai:112.137.131.14:VNU_123-101062017-04-05T14:03:27Z Grain boundary resistivity of the percolative conduction regime in ruthenium doped manganates Phung, ThanhPQ Ruthenates The excellent agreement with experimental data has been achieved in fitting the resistivity of doped manganate–ruthenates for whole temperature range. The analysis interpreted the resistivity in terms of percolation of carriers through the system of grain boundaries, having been assumed as the conductive fractal medium. The percolative conduction regime has been shown substantial for the K-doped ruthenates [H.N. Nhat, H.D. Chinh and M.H. Phan, Solid State Commun. 139 (2006) 456], and we confirm here that this approach also correctly discusses the unusual semiconductor-like behaviours of the doped manganate–ruthenates 2016-05-18T08:18:37Z 2016-05-18T08:18:37Z 2007 Article http://repository.vnu.edu.vn/handle/VNU_123/10106 en Journal of Magnetism and Magnetic Materials 310 (2007);e681–e683 application/pdf Elsevier |
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Vietnam National University, Hanoi |
| building |
VNU Library & Information Center |
| country |
Vietnam |
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VNU Digital Repository |
| language |
English |
| topic |
Ruthenates |
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Ruthenates Phung, ThanhPQ Grain boundary resistivity of the percolative conduction regime in ruthenium doped manganates |
| description |
The excellent agreement with experimental data has been achieved in fitting the resistivity of doped manganate–ruthenates for whole temperature range. The analysis interpreted the resistivity in terms of percolation of carriers through the system of grain boundaries, having been assumed as the conductive fractal medium. The percolative conduction regime has been shown substantial for the K-doped
ruthenates [H.N. Nhat, H.D. Chinh and M.H. Phan, Solid State Commun. 139 (2006) 456], and we confirm here that this approach also correctly discusses the unusual semiconductor-like behaviours of the doped manganate–ruthenates |
| format |
Article |
| author |
Phung, ThanhPQ |
| author_facet |
Phung, ThanhPQ |
| author_sort |
Phung, ThanhPQ |
| title |
Grain boundary resistivity of the percolative conduction regime in ruthenium doped manganates |
| title_short |
Grain boundary resistivity of the percolative conduction regime in ruthenium doped manganates |
| title_full |
Grain boundary resistivity of the percolative conduction regime in ruthenium doped manganates |
| title_fullStr |
Grain boundary resistivity of the percolative conduction regime in ruthenium doped manganates |
| title_full_unstemmed |
Grain boundary resistivity of the percolative conduction regime in ruthenium doped manganates |
| title_sort |
grain boundary resistivity of the percolative conduction regime in ruthenium doped manganates |
| publisher |
Elsevier |
| publishDate |
2016 |
| url |
http://repository.vnu.edu.vn/handle/VNU_123/10106 |
| _version_ |
1680962887370145792 |