Charged Semiconductor Defects

The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect...

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Main Authors: Seebauer, Edmund G., Kratzer, Meredith C.
Format: Book
Language:English
Published: Springer 2017
Subjects:
Online Access:http://repository.vnu.edu.vn/handle/VNU_123/28695
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Institution: Vietnam National University, Hanoi
Language: English
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spelling oai:112.137.131.14:VNU_123-286952020-06-16T03:55:04Z Charged Semiconductor Defects Seebauer, Edmund G. Kratzer, Meredith C. Physics Astronomy 621.38152 The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, Point defects, as well as defect pairs, complexes and clusters. A crucial reference for materials scientists, surface scientists, electrical engineers, and solid-state physicists looking to approach the topic of defect charging from an integrated chemical engineering perspective. Researchers and industrial practitioners alike will find its content invaluable for device and process optimization. 2017-04-14T04:44:24Z 2017-04-14T04:44:24Z 2009 Book 978-1-84882-058-6 http://repository.vnu.edu.vn/handle/VNU_123/28695 en 304p. application/pdf Springer
institution Vietnam National University, Hanoi
building VNU Library & Information Center
country Vietnam
collection VNU Digital Repository
language English
topic Physics
Astronomy
621.38152
spellingShingle Physics
Astronomy
621.38152
Seebauer, Edmund G.
Kratzer, Meredith C.
Charged Semiconductor Defects
description The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, Point defects, as well as defect pairs, complexes and clusters. A crucial reference for materials scientists, surface scientists, electrical engineers, and solid-state physicists looking to approach the topic of defect charging from an integrated chemical engineering perspective. Researchers and industrial practitioners alike will find its content invaluable for device and process optimization.
format Book
author Seebauer, Edmund G.
Kratzer, Meredith C.
author_facet Seebauer, Edmund G.
Kratzer, Meredith C.
author_sort Seebauer, Edmund G.
title Charged Semiconductor Defects
title_short Charged Semiconductor Defects
title_full Charged Semiconductor Defects
title_fullStr Charged Semiconductor Defects
title_full_unstemmed Charged Semiconductor Defects
title_sort charged semiconductor defects
publisher Springer
publishDate 2017
url http://repository.vnu.edu.vn/handle/VNU_123/28695
_version_ 1680962484531363840