Magnetic memory effect in FePd nanoparticles prepared by sonoelectrochemistry
Magnetic memory effect was newly observed in hard magnetic FePd nanoparticles prepared by sonoelectrochemistry. The applied magnetic field was changed in defined protocols during the magnetic relaxation process and the magnetic memory effect occurs when the field changes are larger than the critical...
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oai:112.137.131.14:VNU_123-563502018-07-10T10:03:55Z Magnetic memory effect in FePd nanoparticles prepared by sonoelectrochemistry Nguyen, Thi Thanh Van Truong, Thanh Trung Nguyen, Dang Phu Nguyen, Hoang Nam Nguyen, Hoang Hai FePd nanoparticles sonoelectrochemistry Magnetic memory effect was newly observed in hard magnetic FePd nanoparticles prepared by sonoelectrochemistry. The applied magnetic field was changed in defined protocols during the magnetic relaxation process and the magnetic memory effect occurs when the field changes are larger than the critical field change of around 25 Oe. This magnetic memory effect can be explained by the magnetic reversal processes in strong interaction systems. The width of the energy barrier distribution of these hard magnetic particles is related to the critical field change deduced from this study. 2017-08-10T07:48:36Z 2017-08-10T07:48:36Z 2012 Article Nguyen, T. T. V., et al.(2012). Magnetic memory effect in FePd nanoparticles prepared by sonoelectrochemistry. VNU Journal of Science, Mathematics - Physics Vol. 28, No. 1, 11-18. 2588-1124 http://repository.vnu.edu.vn/handle/VNU_123/56350 en VNU Journal of Science, Mathematics - Physics application/pdf H. : ĐHQGHN |
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FePd nanoparticles sonoelectrochemistry Nguyen, Thi Thanh Van Truong, Thanh Trung Nguyen, Dang Phu Nguyen, Hoang Nam Nguyen, Hoang Hai Magnetic memory effect in FePd nanoparticles prepared by sonoelectrochemistry |
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Magnetic memory effect was newly observed in hard magnetic FePd nanoparticles prepared by sonoelectrochemistry. The applied magnetic field was changed in defined protocols during the magnetic relaxation process and the magnetic memory effect occurs when the field changes are larger than the critical field change of around 25 Oe. This magnetic memory effect can be explained by the magnetic reversal processes in strong interaction systems. The width of the energy barrier distribution of these hard magnetic particles is related to the critical field change deduced from this study. |
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Article |
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Nguyen, Thi Thanh Van Truong, Thanh Trung Nguyen, Dang Phu Nguyen, Hoang Nam Nguyen, Hoang Hai |
author_facet |
Nguyen, Thi Thanh Van Truong, Thanh Trung Nguyen, Dang Phu Nguyen, Hoang Nam Nguyen, Hoang Hai |
author_sort |
Nguyen, Thi Thanh Van |
title |
Magnetic memory effect in FePd nanoparticles prepared by sonoelectrochemistry |
title_short |
Magnetic memory effect in FePd nanoparticles prepared by sonoelectrochemistry |
title_full |
Magnetic memory effect in FePd nanoparticles prepared by sonoelectrochemistry |
title_fullStr |
Magnetic memory effect in FePd nanoparticles prepared by sonoelectrochemistry |
title_full_unstemmed |
Magnetic memory effect in FePd nanoparticles prepared by sonoelectrochemistry |
title_sort |
magnetic memory effect in fepd nanoparticles prepared by sonoelectrochemistry |
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H. : ĐHQGHN |
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2017 |
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http://repository.vnu.edu.vn/handle/VNU_123/56350 |
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