Conductive-perovskite LaNiO3 Thin Films Prepared by Using Solution Process for Electrode Application

Lanthanum nickel oxide LaNiO3 (LNO) isextensively known as one of typical perovskite-structured materials with metallic conductivity, which is suitable for the electrode application in electronic devices such as transistors or solar cells. Since LNO is a low-cost material and a simple fabrication pr...

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Main Authors: Nguyen, Quang Hoa, Bui, Nguyen Quoc Trinh
Format: Article
Language:English
Published: H. : ĐHQGHN 2018
Subjects:
LNO
PZT
Online Access:http://repository.vnu.edu.vn/handle/VNU_123/62874
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Institution: Vietnam National University, Hanoi
Language: English
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spelling oai:112.137.131.14:VNU_123-628742018-10-09T02:49:45Z Conductive-perovskite LaNiO3 Thin Films Prepared by Using Solution Process for Electrode Application Nguyen, Quang Hoa Bui, Nguyen Quoc Trinh LNO Conductive perovskite Solution process Ferroelectric PZT Lanthanum nickel oxide LaNiO3 (LNO) isextensively known as one of typical perovskite-structured materials with metallic conductivity, which is suitable for the electrode application in electronic devices such as transistors or solar cells. Since LNO is a low-cost material and a simple fabrication process, it has been attracted much attention for commercialization. In this paper, we have focused on optimizing the fabrication process of LNO thin films on SiO2/Sisubstrate and Al foil by using asolution process. The crystal structure and surface morphology were characterized by using X-ray diffraction and field-emission scanning electron microscopy (FE-SEM), respectively. It was found that the LNO thin films annealed in range of 550-700oC for 30 minutes exhibited a well-formed crystallization and a dense microstructure. According to the SEM cross-sectional observation, the thickness of LNO thin films was estimated about 80 nm. Also, from the four-probe measurement method, the electrical resistivity of LNO thin film annealed at 600oC had a minimum value of 0.42× 10-2 Ωcm, which waspossibly comparable to conventional conductive oxides. As a result, thecapacitor using Pb1.2(Zr0.4Ti0.6)O3ferroelectric layer annealed at 600oC and LNO bottom electrode providedan interesting ferroelectricity, which includeda remnant polarization of 21µC/cm2 and a saturated polarization of 35µC/cm2 . Moreover, the leakage current density was lower than 2 × 10-5 A/cm2 . 2018-10-09T02:49:45Z 2018-10-09T02:49:45Z 2018 Article Nguyen, Q. H., Bui, N. Q. T. (2018). Conductive-perovskite LaNiO3 Thin Films Prepared by Using Solution Process for Electrode Application. VNU Journal of Science: Mathematics – Physics, Vol. 34, No. 2 (2018) 20-26 2588-1124 http://repository.vnu.edu.vn/handle/VNU_123/62874 en VNU Journal of Science; application/pdf H. : ĐHQGHN
institution Vietnam National University, Hanoi
building VNU Library & Information Center
country Vietnam
collection VNU Digital Repository
language English
topic LNO
Conductive perovskite
Solution process
Ferroelectric
PZT
spellingShingle LNO
Conductive perovskite
Solution process
Ferroelectric
PZT
Nguyen, Quang Hoa
Bui, Nguyen Quoc Trinh
Conductive-perovskite LaNiO3 Thin Films Prepared by Using Solution Process for Electrode Application
description Lanthanum nickel oxide LaNiO3 (LNO) isextensively known as one of typical perovskite-structured materials with metallic conductivity, which is suitable for the electrode application in electronic devices such as transistors or solar cells. Since LNO is a low-cost material and a simple fabrication process, it has been attracted much attention for commercialization. In this paper, we have focused on optimizing the fabrication process of LNO thin films on SiO2/Sisubstrate and Al foil by using asolution process. The crystal structure and surface morphology were characterized by using X-ray diffraction and field-emission scanning electron microscopy (FE-SEM), respectively. It was found that the LNO thin films annealed in range of 550-700oC for 30 minutes exhibited a well-formed crystallization and a dense microstructure. According to the SEM cross-sectional observation, the thickness of LNO thin films was estimated about 80 nm. Also, from the four-probe measurement method, the electrical resistivity of LNO thin film annealed at 600oC had a minimum value of 0.42× 10-2 Ωcm, which waspossibly comparable to conventional conductive oxides. As a result, thecapacitor using Pb1.2(Zr0.4Ti0.6)O3ferroelectric layer annealed at 600oC and LNO bottom electrode providedan interesting ferroelectricity, which includeda remnant polarization of 21µC/cm2 and a saturated polarization of 35µC/cm2 . Moreover, the leakage current density was lower than 2 × 10-5 A/cm2 .
format Article
author Nguyen, Quang Hoa
Bui, Nguyen Quoc Trinh
author_facet Nguyen, Quang Hoa
Bui, Nguyen Quoc Trinh
author_sort Nguyen, Quang Hoa
title Conductive-perovskite LaNiO3 Thin Films Prepared by Using Solution Process for Electrode Application
title_short Conductive-perovskite LaNiO3 Thin Films Prepared by Using Solution Process for Electrode Application
title_full Conductive-perovskite LaNiO3 Thin Films Prepared by Using Solution Process for Electrode Application
title_fullStr Conductive-perovskite LaNiO3 Thin Films Prepared by Using Solution Process for Electrode Application
title_full_unstemmed Conductive-perovskite LaNiO3 Thin Films Prepared by Using Solution Process for Electrode Application
title_sort conductive-perovskite lanio3 thin films prepared by using solution process for electrode application
publisher H. : ĐHQGHN
publishDate 2018
url http://repository.vnu.edu.vn/handle/VNU_123/62874
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