Preparation and Microstructure of Acetate-based Lead-free BSZT Ferroelectric Thin Films Using Sol-gel Technique

Preparation and Microstructure of Acetate-based Lead-free BSZT Ferroelectric Thin Films Using Sol-gel Technique

(Ba0.85Sr0.15)(Ti0.9Zr0.1)O3 (BSZT) lead-free ferroelectric thin films at the vicinity of the morphotropic phase boundary (MPB) were successfully deposited on Pt/Ti/SiO2/Si using a modified spin-coated sol-gel method. Microstructure and electrical properties of the thin film were studied. High resol...

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Bibliographic Details
Main Authors: Pham, Thi Nguyet, Nguyen, Thi Minh Phuong, Vu, Thu Hien, Vu, Ngoc Hung
Format: Article
Language:English
Published: H. : ĐHQGHN 2019
Subjects:
xBST-(1-x)BZT ferroelectric materials
Thin film technology
Sol-gel
Online Access:http://repository.vnu.edu.vn/handle/VNU_123/64487
https//doi.org/ 10.25073/2588-1124/vnumap.4316
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Institution: Vietnam National University, Hanoi
Language: English
Description
Summary:(Ba0.85Sr0.15)(Ti0.9Zr0.1)O3 (BSZT) lead-free ferroelectric thin films at the vicinity of the morphotropic phase boundary (MPB) were successfully deposited on Pt/Ti/SiO2/Si using a modified spin-coated sol-gel method. Microstructure and electrical properties of the thin film were studied. High resolution synchrotron X–ray powder diffraction (SXRD) combined with Rietveld refinement revealed that the samples were crystalized in tetragonal perovskite structure with in-plane symmetry (c < a). Raman spectra also confirmed a tetragonal perovskite crystalline lattice structure. Polarisation studies demonstrate that BSZT films exhibit a rather high saturation polarisation of 22.25 µC.cm−2. Leakage current behaviour was obtained and possible conduction mechanism is discussed

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