A study of CdTe solar cells using Ga-doped MgxZn1-xO buffer/TCO layers: Simulation and performance analysis
The effect of stacked Ga-doped MgxZn1 xO (GMZO) thin films being the n-partner buffer layer and of the transparent conducting oxide (TCO) layer on the performance of CdTe thin film solar cells has been investigated. The diversity of the electrical and optical properties of GMZO films versus Ga and...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2019
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| Subjects: | |
| Online Access: | http://repository.vnu.edu.vn/handle/VNU_123/67568 https://doi.org/10.1016/j.jsamd.2018.12.001 |
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| Institution: | Vietnam National University, Hanoi |
| Language: | English |
| Summary: | The effect of stacked Ga-doped MgxZn1 xO (GMZO) thin films being the n-partner buffer layer and of the
transparent conducting oxide (TCO) layer on the performance of CdTe thin film solar cells has been
investigated. The diversity of the electrical and optical properties of GMZO films versus Ga and Mg
doping concentrations suggested the use of low-Ga-doped MgxZn1 xO (LGMZO) films as a high resistance
transparent buffer layer. Thus, a high-Ga-doped MgxZn1 xO (HGMZO) film is nominated as a transparent
TCO layer. In this respect, a (nþ)-HGMZO/(n)-LGMZO/(p)-CdTe/MoTe2/Mo suggested structure has been
simulated using the Analysis of Microelectronic and Photonic Structures (AMPS-1D) software under the
AM1.5G illumination and at a temperature of 300 K. The structure uses the molybdenum ditelluride
(MoTe2) layer as a back surface between the CdTe absorber layer and the Mo back contact. The effect of
the thickness and the carrier concentration of the LGMZO-buffer, and of the CdTe absorber layers on the
CdTe cell performance was investigated |
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