Influences of PbS Quantum Dot Layers on Power Conversion Efficiency of Single Junction GaAs Solar Cells

• Main Author: Nguyen, Dinh Lam
• Format: Article
• Language: English
• Published: H. : ĐHQGHN 2020
• Subjects: Quantum dots; Solar cells; Anti-reflection coating
• Online Access: http://repository.vnu.edu.vn/handle/VNU_123/68354; https//doi.org/ 10.25073/2588-1124/vnumap.4361
• Institution: Vietnam National University, Hanoi

PbS quantum dots were coated on the surface of single junction GaAs solar cells by a drop coating method. The thickness of PbS quantum dot layer was controlled through changing the number of coating layers. The influences of PbS coating layers on characteristics of GaAs single junction solar cells were investigated through I-V characteristic measurements, optical reflectance spectra, and quantum efficiencies. The results indicated that, the short-circuit current can be improved up to 15% with two PbS coating layers. Other parameters such as Voc and FF are hardly affected by the number of PbS coating layers. Based on the results of optical reflectance spectra and quantum efficiencies, the enhancement in the short-circuit current can be attributed to the surface antireflection layer and the ability to transfer high energy photon-generated charge carriers.