發送短信 : Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications

  _____     _____     _  __    _____   __    __  
 /  ___||  |  ___||  | |/ //  |  ___|| \ \\ / // 
| // __    | ||__    | ' //   | ||__    \ \/ //  
| \\_\ ||  | ||__    | . \\   | ||__     \  //   
 \____//   |_____||  |_|\_\\  |_____||    \//    
  `---`    `-----`   `-` --`  `-----`      `