Integrated circuit design and characterization of a 1 volt CMOS low noise amplifier utilizing 90 nm technology

• Main Authors: Dacumos, Reynald Ian C., Gumba, Jessica Anne C., Hong, Jericho Stephen S., Kim, Woon
• Format: text
• Language: English
• Published: Animo Repository 2012
• Online Access: https://animorepository.dlsu.edu.ph/etd_bachelors/14825
• Institution: De La Salle University

In able to cope up with the needs and demands of the fast growing technology, engineers unremittingly strive to come up and improve designs of integrated circuits. Since this is not a well-developed field in the country, the authors of this paper wish to contribute to the emerging industry of IC design. Several researchers conducted recently tell us of the significance of the up and coming integrated circuits, one of which is that of the low noise amplifiers, a type of amplifier most oftenly used in the field of telecommunications. Low Noise Amplifiers are considered as one of the most important stages in RF receivers. Its main function is to amplify extremely low signals without adding noise, hence conserving the required signal-to-noise ratio of the whole communications system at extremely low power levels. The general objective of this thesis project is to design a Low Noise Amplifier implemented on a 90 nm CMOS process operating at 1 volt.