A study of a type-N negative resistance circuit for a single carrier frequency bidirectional amplifier
The first negative-resistance device was announced in 1918 and it was greeted with doubts by some and fascination by others. Physicist and engineers disagreed with the said device because it clearly violates the law of conservation of energy but it was quickly resolved when the devices was proven to...
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| Main Authors: | , , |
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| Format: | text |
| Language: | English |
| Published: |
Animo Repository
2008
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| Subjects: | |
| Online Access: | https://animorepository.dlsu.edu.ph/etd_bachelors/5889 |
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| Institution: | De La Salle University |
| Language: | English |
| Summary: | The first negative-resistance device was announced in 1918 and it was greeted with doubts by some and fascination by others. Physicist and engineers disagreed with the said device because it clearly violates the law of conservation of energy but it was quickly resolved when the devices was proven to be nonlinear and the word negative-resistance implies only that its slope is negative at a certain region of voltage-current characteristics.
This paper presents an investigation of the possibility of using a negative resistance circuit for a bidirectional amplifier (BDA). A bidirectional amplifier is a kind of amplifier that produces gain either at the output or at the input. This negative resistance circuit is configured using two complimentary transistors and the bidirectional amplifier is constructed as a pi-network. |
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