Synthesis and characterization of gallium oxide/tin oxide nanostructures via horizontal vapor phase growth (HVPG) technique for potential power electronics application
The monoclinic b-Gallium oxide (Ga2O3) is viewed as a potential candidate for power electronics due to its excellent material properties. High resistivity is associated to the undoped form causing the incorporation of Sn to reduce it. Ga2O3/SnO2 nanostructures were effectively synthesized via Horizo...
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| Format: | text |
| Language: | English |
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Animo Repository
2020
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| Online Access: | https://animorepository.dlsu.edu.ph/etd_masteral/6048 https://animorepository.dlsu.edu.ph/cgi/viewcontent.cgi?article=13151&context=etd_masteral |
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| Institution: | De La Salle University |
| Language: | English |
| Summary: | The monoclinic b-Gallium oxide (Ga2O3) is viewed as a potential candidate for power electronics due to its excellent material properties. High resistivity is associated to the undoped form causing the incorporation of Sn to reduce it. Ga2O3/SnO2 nanostructures were effectively synthesized via Horizontal Vapor Phase Growth (HVPG) Technique. Its attributes were characterized by SEM equipped with EDX, and FTIR. Keithley 2450 sourcemeter was utilized for the I-V characteristics. The resistivity was established using van der Pauw technique while the mobility and carrier concentration were carried through Hall Effect measurement at room temperature using a 0.30 T magnet. The increasing concentration of SnO2 resulted to the increase on the size of both nanostructures and globules. The resistivity of Ga2O3 was found to decrease when the concentration of SnO2 was increased. The data was supported by the Raman peak located at 662 cm-1 which was attributed to high conductivity of b-Ga2O3. High mobility was attained by 90:10 wt. %. All the samples were considered as n-type semiconductor. e phase was observed as a consequence of adding SnO2. Furthermore, both power loss and specific on-resistance were achieved by 90:10 wt. %. Hence, it was considered as the optimal n-type Ga2O3/SnO2 concentration, which may qualify as a potential substrate for power electronics application. Future research works shall be geared to identifying a suitable p-type material and ohmic contacts to realize its full power electronic device fabrication. In addition, studies shall be directed on the characterization of other material properties for further applications such as in optoelectronics and gas sensing. |
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