Photoconductivity, carrier lifetime and mobility evaluation of GaAs films on Si (100) using optical pump terahertz probe measurements

• المؤلفون الرئيسيون: Afalla, Jessica, Gonzales, Karl Cedric, Prieto, Elizabeth Ann, Catindig, Gerald, Vasquez, John Daniel, Husay, Horace Andrew, Quitoras, Mae Agatha Tumanguil, Muldera, Joselito, Kitahara, Hideaki, Somintac, Armando, Salvador, Arnel A., Estacio, Elmer, Tani, Masahiko
• التنسيق: text
• منشور في: Animo Repository 2019
• الموضوعات: Gallium arsenide; Silicon; Photoconductivity; Physics
• الوصول للمادة أونلاين: https://animorepository.dlsu.edu.ph/faculty_research/3298

The carrier lifetimes and electron mobility values were estimated for 2 μm thick GaAs films grown on Si (100) substrates by means of optical pump terahertz probe (OPTP) technique. The GaAs/Si films measured were epitaxial grown at different substrate temperatures (T S = 520 °C or T S = 630 °C). From...