Enhanced terahertz emission from SI-GaAs with a sub-wavelength 1D metal array

Enhanced terahertz emission from SI-GaAs with a sub-wavelength 1D metal array

Terahertz emission enhancement in SI-GaAs, having a deposited periodic 1D metal array, is reported. The one order enhancement is currently attributed to the localization of the terahertz electromagnetic field at the GaAs apertures.

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Bibliographic Details
Main Authors: Faustino, Maria Angela B., Lopez, Lorenzo P., Jr., Afalla, Jessica Pauline, Muldera, Joselito E., Felix, Mark Jayson, Salvador, Arnel A., Somintac, Armando S., Estacio, Elmer S.
Format: text
Published: Animo Repository 2015
Subjects:
Terahertz spectroscopy
Silicon
Gallium arsenide
Physics
Online Access:https://animorepository.dlsu.edu.ph/faculty_research/8129
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Institution: De La Salle University
Description
Summary:Terahertz emission enhancement in SI-GaAs, having a deposited periodic 1D metal array, is reported. The one order enhancement is currently attributed to the localization of the terahertz electromagnetic field at the GaAs apertures.

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