ZnO-Based Resistive Random Access Memory with Ti Interfacial Layer for Low Power Application

ZnO-Based Resistive Random Access Memory with Ti Interfacial Layer for Low Power Application

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Bibliographic Details
Main Author: Isyaku, Usman Bature
Format: Thesis
Published: 2024
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://utpedia.utp.edu.my/id/eprint/27023/
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Institution: Universiti Teknologi Petronas

Internet

http://utpedia.utp.edu.my/id/eprint/27023/

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