Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn(S,Se)2 solar cell

Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn(S,Se)2 solar cell

Excitation wavelength dependent femtosecond transient photocurrents were measured on CuIn(S,Se) 2 solar cell devices, in the range of 330 nm–1300 nm. Below 450 nm wavelength excitations, charge recombination in CdS/ZnO layers is found to be responsible for longer decays and low...

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Bibliographic Details
Main Authors: Nalla, Venkatram, Ho, John C. W., Batabyal, Sudip K., Wang, Yue, Tok, Alfred Iing Yoong, Sun, Handong, Wong, Lydia H., Zheludev, Nikolay
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2014
Subjects:
DRNTU::Science::Physics
Online Access:https://hdl.handle.net/10356/100491
http://hdl.handle.net/10220/24094
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Institution: Nanyang Technological University
Language: English
Description
Summary:Excitation wavelength dependent femtosecond transient photocurrents were measured on CuIn(S,Se) 2 solar cell devices, in the range of 330 nm–1300 nm. Below 450 nm wavelength excitations, charge recombination in CdS/ZnO layers is found to be responsible for longer decays and lower EQE. Femtosecond pump-probe measurements also support the charge transfer and recombination in CdS/ZnO layers. These measurements will be helpful to design high efficiency CISSe solar cells, by selecting suitable buffer layers.

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