Alteration of Mn exchange coupling by oxygen interstitials in ZnO:Mn thin films

• Main Authors: Ilyas, Usman, Rawat, Rajdeep Singh, Wang, Y., Tan, T. L., Lee, P., Chen, P., Sun, Handong, Li, Fengji, Zhang, Sam
• Other Authors: School of Mechanical and Aerospace Engineering
• Format: Article
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/100524; http://hdl.handle.net/10220/11034
• Institution: Nanyang Technological University

The un-doped and Mn doped ZnO thin films, with oxygen rich stoichiometry, were deposited onto Si (1 0 0) substrate using spin coating technique. The structural analysis revealed the hexagonal wurtzite structure without any impurity phase formation. A consistent increase in cell volume with the increase in Mn doping concentration confirmed the successful incorporation of bigger sized tetrahedral Mn2+ ions (0.83 Å) in ZnO host matrix that was also endorsed by the presence of Mn 2p3/2 core level XPS spectroscopic peak. Extended deep level emission (DLE) spectra centered at ∼627 nm confirmed the presence of oxygen interstitials. Moreover, the magnetic measurements of field dependent M–H curves revealed the origin of ferromagnetic ordering from Mn-defect pair exchange coupling with oxygen interstitials in ZnO host matrix.