Band parameters and electronic structures of wurtzite ZnO and ZnO∕MgZnO quantum wells

The band structures of wurtzite ZnO are calculated by the empirical pseudopotential method EPM . The eight parameters of the Zn and O atomic pseudopotential form factors are obtained with the formula of Schluter et al. Phys. Rev. B 12, 4200 1975 . The band parameters are extracted by using a k...

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Main Authors:	Fan, Weijun, Xia, Jian-Bai, Agus, P. A., Tan, Swee Tiam, Yu, S. F., Sun, Xiaowei
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2013
Subjects:	DRNTU::Engineering::Electrical and electronic engineering
Online Access:	https://hdl.handle.net/10356/100599 http://hdl.handle.net/10220/18188
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-100599
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spelling	sg-ntu-dr.10356-1005992020-03-07T14:02:47Z Band parameters and electronic structures of wurtzite ZnO and ZnO∕MgZnO quantum wells Fan, Weijun Xia, Jian-Bai Agus, P. A. Tan, Swee Tiam Yu, S. F. Sun, Xiaowei School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering The band structures of wurtzite ZnO are calculated by the empirical pseudopotential method EPM . The eight parameters of the Zn and O atomic pseudopotential form factors are obtained with the formula of Schluter et al. Phys. Rev. B 12, 4200 1975 . The band parameters are extracted by using a k· p Hamiltonian to fit the EPM results. The calculated band-edge energies Eg, EA, EB, and EC at the point are in good agreement with the experimental results. Based on the band parameters obtained, valence subbands of wurtzite ZnO/MgxZn1−xO tensile-strained quantum wells with different well widths and Mg compositions are calculated by the six-band k· p method. Published version 2013-12-10T01:50:53Z 2019-12-06T20:25:08Z 2013-12-10T01:50:53Z 2019-12-06T20:25:08Z 2006 2006 Journal Article Fan, W., Xia, J.-B., Agus, P. A., Tan, S. T., Yu, S. F.,& Sun, X. (2006). Band parameters and electronic structures of wurtzite ZnO and ZnO∕MgZnO quantum wells. Journal of applied physics, 99, 013702. 0021-8979 https://hdl.handle.net/10356/100599 http://hdl.handle.net/10220/18188 10.1063/1.2150266 en Journal of applied physics © 2006 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.2150266. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 4 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering Fan, Weijun Xia, Jian-Bai Agus, P. A. Tan, Swee Tiam Yu, S. F. Sun, Xiaowei Band parameters and electronic structures of wurtzite ZnO and ZnO∕MgZnO quantum wells
description	The band structures of wurtzite ZnO are calculated by the empirical pseudopotential method EPM . The eight parameters of the Zn and O atomic pseudopotential form factors are obtained with the formula of Schluter et al. Phys. Rev. B 12, 4200 1975 . The band parameters are extracted by using a k· p Hamiltonian to fit the EPM results. The calculated band-edge energies Eg, EA, EB, and EC at the point are in good agreement with the experimental results. Based on the band parameters obtained, valence subbands of wurtzite ZnO/MgxZn1−xO tensile-strained quantum wells with different well widths and Mg compositions are calculated by the six-band k· p method.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Fan, Weijun Xia, Jian-Bai Agus, P. A. Tan, Swee Tiam Yu, S. F. Sun, Xiaowei
format	Article
author	Fan, Weijun Xia, Jian-Bai Agus, P. A. Tan, Swee Tiam Yu, S. F. Sun, Xiaowei
author_sort	Fan, Weijun
title	Band parameters and electronic structures of wurtzite ZnO and ZnO∕MgZnO quantum wells
title_short	Band parameters and electronic structures of wurtzite ZnO and ZnO∕MgZnO quantum wells
title_full	Band parameters and electronic structures of wurtzite ZnO and ZnO∕MgZnO quantum wells
title_fullStr	Band parameters and electronic structures of wurtzite ZnO and ZnO∕MgZnO quantum wells
title_full_unstemmed	Band parameters and electronic structures of wurtzite ZnO and ZnO∕MgZnO quantum wells
title_sort	band parameters and electronic structures of wurtzite zno and zno∕mgzno quantum wells
publishDate	2013
url	https://hdl.handle.net/10356/100599 http://hdl.handle.net/10220/18188
_version_	1681047378239422464

Band parameters and electronic structures of wurtzite ZnO and ZnO∕MgZnO quantum wells

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