Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor
The two-dimensional material, molybdenum disulfide (MoS2), has attracted considerable attention for numerous applications in optoelectronics. Here, we demonstrate a plasmonic enhancement of photocurrent in MoS2 field-effect-transistor decorated with gold nanoparticles, with significantly enhanced ph...
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sg-ntu-dr.10356-1008112023-07-14T15:55:00Z Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor Lin, Jiadan Li, Hai Zhang, Hua Chen, Wei School of Materials Science & Engineering The two-dimensional material, molybdenum disulfide (MoS2), has attracted considerable attention for numerous applications in optoelectronics. Here, we demonstrate a plasmonic enhancement of photocurrent in MoS2 field-effect-transistor decorated with gold nanoparticles, with significantly enhanced photocurrent peaked at the plasmon resonant wavelength around 540 nm. Our findings offer a possibility to realize wavelength selectable photodetection in MoS2 based phototransistors. Published version 2013-07-05T03:26:25Z 2019-12-06T20:28:44Z 2013-07-05T03:26:25Z 2019-12-06T20:28:44Z 2013 2013 Journal Article Lin, J., Li, H., Zhang, H., & Chen, W. (2013). Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor. Applied Physics Letters, 102(20). 0003-6951 https://hdl.handle.net/10356/100811 http://hdl.handle.net/10220/10984 10.1063/1.4807658 en Applied physics letters © 2013 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4807658]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
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The two-dimensional material, molybdenum disulfide (MoS2), has attracted considerable attention for numerous applications in optoelectronics. Here, we demonstrate a plasmonic enhancement of photocurrent in MoS2 field-effect-transistor decorated with gold nanoparticles, with significantly enhanced photocurrent peaked at the plasmon resonant wavelength around 540 nm. Our findings offer a possibility to realize wavelength selectable photodetection in MoS2 based phototransistors. |
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School of Materials Science & Engineering |
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School of Materials Science & Engineering Lin, Jiadan Li, Hai Zhang, Hua Chen, Wei |
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Lin, Jiadan Li, Hai Zhang, Hua Chen, Wei |
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Lin, Jiadan Li, Hai Zhang, Hua Chen, Wei Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor |
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Lin, Jiadan |
title |
Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor |
title_short |
Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor |
title_full |
Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor |
title_fullStr |
Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor |
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Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor |
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plasmonic enhancement of photocurrent in mos2 field-effect-transistor |
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2013 |
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https://hdl.handle.net/10356/100811 http://hdl.handle.net/10220/10984 |
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