Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor

The two-dimensional material, molybdenum disulfide (MoS2), has attracted considerable attention for numerous applications in optoelectronics. Here, we demonstrate a plasmonic enhancement of photocurrent in MoS2 field-effect-transistor decorated with gold nanoparticles, with significantly enhanced ph...

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Main Authors: Lin, Jiadan, Li, Hai, Zhang, Hua, Chen, Wei
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/100811
http://hdl.handle.net/10220/10984
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1008112023-07-14T15:55:00Z Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor Lin, Jiadan Li, Hai Zhang, Hua Chen, Wei School of Materials Science & Engineering The two-dimensional material, molybdenum disulfide (MoS2), has attracted considerable attention for numerous applications in optoelectronics. Here, we demonstrate a plasmonic enhancement of photocurrent in MoS2 field-effect-transistor decorated with gold nanoparticles, with significantly enhanced photocurrent peaked at the plasmon resonant wavelength around 540 nm. Our findings offer a possibility to realize wavelength selectable photodetection in MoS2 based phototransistors. Published version 2013-07-05T03:26:25Z 2019-12-06T20:28:44Z 2013-07-05T03:26:25Z 2019-12-06T20:28:44Z 2013 2013 Journal Article Lin, J., Li, H., Zhang, H., & Chen, W. (2013). Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor. Applied Physics Letters, 102(20). 0003-6951 https://hdl.handle.net/10356/100811 http://hdl.handle.net/10220/10984 10.1063/1.4807658 en Applied physics letters © 2013 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4807658]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
description The two-dimensional material, molybdenum disulfide (MoS2), has attracted considerable attention for numerous applications in optoelectronics. Here, we demonstrate a plasmonic enhancement of photocurrent in MoS2 field-effect-transistor decorated with gold nanoparticles, with significantly enhanced photocurrent peaked at the plasmon resonant wavelength around 540 nm. Our findings offer a possibility to realize wavelength selectable photodetection in MoS2 based phototransistors.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Lin, Jiadan
Li, Hai
Zhang, Hua
Chen, Wei
format Article
author Lin, Jiadan
Li, Hai
Zhang, Hua
Chen, Wei
spellingShingle Lin, Jiadan
Li, Hai
Zhang, Hua
Chen, Wei
Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor
author_sort Lin, Jiadan
title Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor
title_short Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor
title_full Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor
title_fullStr Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor
title_full_unstemmed Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor
title_sort plasmonic enhancement of photocurrent in mos2 field-effect-transistor
publishDate 2013
url https://hdl.handle.net/10356/100811
http://hdl.handle.net/10220/10984
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