A dual-polarized switchable microwave absorber
This paper describes a new design of dual-polarized circuit analog absorber, which is a two-dimensional periodic array of unit cells. Each unit cell consists of a top capacitive sheet, PIN diodes connected with microstrip lines on the middle layer, and a conducting ground plane. By changing the bias...
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sg-ntu-dr.10356-1010742020-03-07T13:24:50Z A dual-polarized switchable microwave absorber Zhang, Qi Shen, Zhongxiang School of Electrical and Electronic Engineering IEEE Antennas and Propagation Society International Symposium (2012 : Chicago, Illinois, US) DRNTU::Engineering::Electrical and electronic engineering This paper describes a new design of dual-polarized circuit analog absorber, which is a two-dimensional periodic array of unit cells. Each unit cell consists of a top capacitive sheet, PIN diodes connected with microstrip lines on the middle layer, and a conducting ground plane. By changing the biasing state of PIN diodes, two switchable operating bandwidths can be achieved. With proper selection of the component values, this structure can realize wide bandwidths for the two states under both TE and TM incidences. A design example is provided to demonstrate the design principle and switchable absorption. 2013-10-10T01:45:09Z 2019-12-06T20:33:05Z 2013-10-10T01:45:09Z 2019-12-06T20:33:05Z 2012 2012 Conference Paper Zhang, Q., & Shen, Z. (2012). A dual-polarized switchable microwave absorber. 2012 IEEE Antennas and Propagation Society International Symposium (APSURSI), pp.1-2. https://hdl.handle.net/10356/101074 http://hdl.handle.net/10220/16318 10.1109/APS.2012.6348714 en |
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DRNTU::Engineering::Electrical and electronic engineering Zhang, Qi Shen, Zhongxiang A dual-polarized switchable microwave absorber |
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This paper describes a new design of dual-polarized circuit analog absorber, which is a two-dimensional periodic array of unit cells. Each unit cell consists of a top capacitive sheet, PIN diodes connected with microstrip lines on the middle layer, and a conducting ground plane. By changing the biasing state of PIN diodes, two switchable operating bandwidths can be achieved. With proper selection of the component values, this structure can realize wide bandwidths for the two states under both TE and TM incidences. A design example is provided to demonstrate the design principle and switchable absorption. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Zhang, Qi Shen, Zhongxiang |
format |
Conference or Workshop Item |
author |
Zhang, Qi Shen, Zhongxiang |
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Zhang, Qi |
title |
A dual-polarized switchable microwave absorber |
title_short |
A dual-polarized switchable microwave absorber |
title_full |
A dual-polarized switchable microwave absorber |
title_fullStr |
A dual-polarized switchable microwave absorber |
title_full_unstemmed |
A dual-polarized switchable microwave absorber |
title_sort |
dual-polarized switchable microwave absorber |
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2013 |
url |
https://hdl.handle.net/10356/101074 http://hdl.handle.net/10220/16318 |
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