Emulating the Ebbinghaus forgetting curve of the human brain with a NiO-based memristor

• Main Authors: Liu, Z., Yu, Q., Deng, L. J., Hu, S. G., Liu, Y., Yin, Y., Chen, Tupei, Hosaka, Sumio
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/101169; http://hdl.handle.net/10220/18293
• Institution: Nanyang Technological University

The well-known Ebbinghaus forgetting curve, which describes how information is forgotten over time, can be emulated using a NiO-based memristor with conductance that decreases with time after the application of electrical pulses. Here, the conductance is analogous to the memory state, while each electrical pulse represents a memory stimulation or learning event. The decrease in the conductance with time depends on the stimulation parameters, including pulse height and width and the number of pulses, which emulates memory loss behavior well in that the time taken for the memory to be lost depends on how the information is learned.