Quantum dot-doped porous silicon metal–semiconductor metal photodetector

• المؤلفون الرئيسيون: Hsiao, Vincent K. S., Chou, Chia-Man, Cho, Hsing-Tzu, Yong, Ken-Tye, Law, Wing-Cheung
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/101420; http://hdl.handle.net/10220/18686
• المؤسسة: Nanyang Technological University

In this paper, we report on the enhancement of spectral photoresponsivity of porous silicon metal–semiconductor metal (PS-MSM) photodetector embedded with colloidal quantum dots (QDs) inside the pore layer. The detection efficiency of QDs/PS hybrid-MSM photodetector was enhanced by five times larger...