Electronic transport in the multi-terminal graphene nanodevices

• Main Authors: Ye, En-Jia, Lan, Jin, Sui, Wen-Quan, Sun, Changqing, Zhao, Xuean
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/101567; http://hdl.handle.net/10220/16785
• Institution: Nanyang Technological University

We examined the ac transport attribute of the multi-terminal structures in the absence and presence of magnetic field. We found that the ac response depends on the structural configurations and that the admittance varies with the features of the attached nanoribbons. In the vicinity of Dirac point the dc conductance manifests a dip or peak and the imaginary part (emittance) vanishes or not, depending on whether the attached ribbon is semiconductive or metallic. In the presence of magnetic field, the emittance becomes asymmetric reflecting the dynamic behaviors of electron and hole.