Dominant factor determining the conduction-type of nitrogen-doped ZnO film

• المؤلفون الرئيسيون: Li, L., Shan, C. X., Zhang, X. T., Lu, Y. M., Sun, B. D., Ma, X. Z., Jiang, D. L., Wu, T.
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials; DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/101683; http://hdl.handle.net/10220/19634
• المؤسسة: Nanyang Technological University

Nitrogen-doped zinc oxide (ZnO) film has been grown by molecular beam epitaxy. The as-grown sample showed p-type conduction with a hole concentration of 3.1×1017 cm−3. After an annealing process in O2 at 600 °C for 30 min, p-type conduction was still remained, and the hole concentration of the film...