The effects of high-pressure compression on transport and thermoelectric properties of TiS2 at low temperatures from 5 to 310K
The effects of high-pressure compression on the transport and thermoelectric properties of TiS2 were investigated at temperatures ranging from 5 to 310 K. The results indicated that compression under the pressure of 6 GPa caused a significant decrease (16-fold at 300 K) in the absolute thermopowe...
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sg-ntu-dr.10356-1018322023-07-14T15:57:35Z The effects of high-pressure compression on transport and thermoelectric properties of TiS2 at low temperatures from 5 to 310K Hng, Huey Hoon Li, D. Qin, X. Y. Li, H. J. Zhang, J. School of Materials Science & Engineering DRNTU::Science::Physics The effects of high-pressure compression on the transport and thermoelectric properties of TiS2 were investigated at temperatures ranging from 5 to 310 K. The results indicated that compression under the pressure of 6 GPa caused a significant decrease (16-fold at 300 K) in the absolute thermopower |S| and the thermal conductivity (5-fold at 300 K). At the same time, the electrical resistivity ρ increased by two orders of magnitude after the compression. A transition from metallic state (dρ /dT>0) to semiconductorlike state (dρ /dT<0) was found to occur after the compression. This transition to the semiconductorlike state could be caused by the substantially enhanced grain boundary (GB) scattering due to the refinement of its grains to the nanoscale range, which should also be responsible for the remarkable increase in the resistivity and large decrease in thermal conductivity. Moreover, Mott’s two-dimensional variable range hopping law, ln ρ∝T-1/3, was observed at T<~100 K for TiS2 after the compression, suggesting that substantial potential disorder was produced by the high-pressure compression. The significant decrease of |S| could originate from the possible compositional disorder in the GBs of TiS2 after compression. The thermoelectric figure of merit of TiS2 decreased after the compaction due to the large decrease in |S| and increase in ρ, indicating that high-pressure compression is not beneficial to the thermoelectric performance of TiS2. Published version 2014-02-18T05:48:59Z 2019-12-06T20:45:14Z 2014-02-18T05:48:59Z 2019-12-06T20:45:14Z 2008 2008 Journal Article Li, D., Qin, X. Y., Li, H. J., Zhang, J. & Hng, H. H. (2008). The effects of high-pressure compression on transport and thermoelectric properties of TiS2 at low temperatures from 5 to 310K. Journal of applied physics, 103(12), 123704-. https://hdl.handle.net/10356/101832 http://hdl.handle.net/10220/18825 10.1063/1.2938748 en Journal of applied physics © 2008 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: [http://dx.doi.org/10.1063/1.2938748]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
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DRNTU::Science::Physics Hng, Huey Hoon Li, D. Qin, X. Y. Li, H. J. Zhang, J. The effects of high-pressure compression on transport and thermoelectric properties of TiS2 at low temperatures from 5 to 310K |
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The effects of high-pressure compression on the transport and thermoelectric properties of TiS2
were investigated at temperatures ranging from 5 to 310 K. The results indicated that compression
under the pressure of 6 GPa caused a significant decrease (16-fold at 300 K) in the absolute
thermopower |S| and the thermal conductivity (5-fold at 300 K). At the same time, the electrical
resistivity ρ increased by two orders of magnitude after the compression. A transition from metallic
state (dρ /dT>0) to semiconductorlike state (dρ /dT<0) was found to occur after the compression.
This transition to the semiconductorlike state could be caused by the substantially enhanced grain
boundary (GB) scattering due to the refinement of its grains to the nanoscale range, which should
also be responsible for the remarkable increase in the resistivity and large decrease in thermal
conductivity. Moreover, Mott’s two-dimensional variable range hopping law, ln ρ∝T-1/3, was
observed at T<~100 K for TiS2 after the compression, suggesting that substantial potential
disorder was produced by the high-pressure compression. The significant decrease of |S| could
originate from the possible compositional disorder in the GBs of TiS2 after compression. The
thermoelectric figure of merit of TiS2 decreased after the compaction due to the large decrease in |S|
and increase in ρ, indicating that high-pressure compression is not beneficial to the thermoelectric
performance of TiS2. |
author2 |
School of Materials Science & Engineering |
author_facet |
School of Materials Science & Engineering Hng, Huey Hoon Li, D. Qin, X. Y. Li, H. J. Zhang, J. |
format |
Article |
author |
Hng, Huey Hoon Li, D. Qin, X. Y. Li, H. J. Zhang, J. |
author_sort |
Hng, Huey Hoon |
title |
The effects of high-pressure compression on transport and thermoelectric properties of TiS2 at low temperatures from 5 to 310K |
title_short |
The effects of high-pressure compression on transport and thermoelectric properties of TiS2 at low temperatures from 5 to 310K |
title_full |
The effects of high-pressure compression on transport and thermoelectric properties of TiS2 at low temperatures from 5 to 310K |
title_fullStr |
The effects of high-pressure compression on transport and thermoelectric properties of TiS2 at low temperatures from 5 to 310K |
title_full_unstemmed |
The effects of high-pressure compression on transport and thermoelectric properties of TiS2 at low temperatures from 5 to 310K |
title_sort |
effects of high-pressure compression on transport and thermoelectric properties of tis2 at low temperatures from 5 to 310k |
publishDate |
2014 |
url |
https://hdl.handle.net/10356/101832 http://hdl.handle.net/10220/18825 |
_version_ |
1773551356555034624 |