RF CMOS low-phase-noise LC oscillator through memory reduction tail transistor

Based on the understanding of flicker noise generation in “silicon metal-oxide semiconductor field-effect transistors” (MOSFETs), a novel method for improving the phase noise performance of a CMOS LC oscillator is presented. Zhou et al. and Hoogee have suggested that th...

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Main Authors:	Boon, Chirn Chye, Do, Manh Anh, Yeo, Kiat Seng, Ma, Jianguo, Zhang, Xiao Ling
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2009
Subjects:	DRNTU::Engineering::Electrical and electronic engineering
Online Access:	https://hdl.handle.net/10356/101935 http://hdl.handle.net/10220/4647
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-1019352020-03-07T14:00:35Z RF CMOS low-phase-noise LC oscillator through memory reduction tail transistor Boon, Chirn Chye Do, Manh Anh Yeo, Kiat Seng Ma, Jianguo Zhang, Xiao Ling School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Based on the understanding of flicker noise generation in “silicon metal-oxide semiconductor field-effect transistors” (MOSFETs), a novel method for improving the phase noise performance of a CMOS LC oscillator is presented. Zhou et al. and Hoogee have suggested that the 1/f noise can be reduced through a switched gate, and the flicker noise generated is inversely proportional to the gate switching frequency. The novel tail transistor topology is compared to the two popular tail transistor topologies, namely, the fixed biasing tail transistor and without tail transistor. Through this technique, a figure of merit of 193 dB is achieved using a fully integrated CMOS oscillator with a tank quality factor of about 9. Published version 2009-06-22T08:56:30Z 2019-12-06T20:46:56Z 2009-06-22T08:56:30Z 2019-12-06T20:46:56Z 2004 2004 Journal Article Boon,C. C., Do, M. A., Yeo, K. S., Ma,J. G., & Zhang,X. L. (2004). RF CMOS low-phase-noise LC oscillator through memory reduction tail transistor. IEEE Transactions on Circuits and Systems—II: Express Briefs, 51(2), 85-90. 1057-7130 https://hdl.handle.net/10356/101935 http://hdl.handle.net/10220/4647 10.1109/TCSII.2003.821519 99670 en IEEE transactions on circuits and systems—II : express briefs © 2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. 6 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering Boon, Chirn Chye Do, Manh Anh Yeo, Kiat Seng Ma, Jianguo Zhang, Xiao Ling RF CMOS low-phase-noise LC oscillator through memory reduction tail transistor
description	Based on the understanding of flicker noise generation in “silicon metal-oxide semiconductor field-effect transistors” (MOSFETs), a novel method for improving the phase noise performance of a CMOS LC oscillator is presented. Zhou et al. and Hoogee have suggested that the 1/f noise can be reduced through a switched gate, and the flicker noise generated is inversely proportional to the gate switching frequency. The novel tail transistor topology is compared to the two popular tail transistor topologies, namely, the fixed biasing tail transistor and without tail transistor. Through this technique, a figure of merit of 193 dB is achieved using a fully integrated CMOS oscillator with a tank quality factor of about 9.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Boon, Chirn Chye Do, Manh Anh Yeo, Kiat Seng Ma, Jianguo Zhang, Xiao Ling
format	Article
author	Boon, Chirn Chye Do, Manh Anh Yeo, Kiat Seng Ma, Jianguo Zhang, Xiao Ling
author_sort	Boon, Chirn Chye
title	RF CMOS low-phase-noise LC oscillator through memory reduction tail transistor
title_short	RF CMOS low-phase-noise LC oscillator through memory reduction tail transistor
title_full	RF CMOS low-phase-noise LC oscillator through memory reduction tail transistor
title_fullStr	RF CMOS low-phase-noise LC oscillator through memory reduction tail transistor
title_full_unstemmed	RF CMOS low-phase-noise LC oscillator through memory reduction tail transistor
title_sort	rf cmos low-phase-noise lc oscillator through memory reduction tail transistor
publishDate	2009
url	https://hdl.handle.net/10356/101935 http://hdl.handle.net/10220/4647
_version_	1681038344175222784

RF CMOS low-phase-noise LC oscillator through memory reduction tail transistor

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