Gao, B., Yu, H., Lu, Y., Chen, B., Fang, Z., Fu, Y. H., . . . Engineering, S. o. E. a. E. (2013). Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect.
استشهاد بنمط شيكاغوGao, Bin, et al. Improvement of Endurance Degradation for Oxide Based Resistive Switching Memory Devices Correlated With Oxygen Vacancy Accumulation Effect. 2013.
MLA استشهادGao, Bin, et al. Improvement of Endurance Degradation for Oxide Based Resistive Switching Memory Devices Correlated With Oxygen Vacancy Accumulation Effect. 2013.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.