Gao, B., Yu, H., Lu, Y., Chen, B., Fang, Z., Fu, Y. H., . . . Engineering, S. o. E. a. E. (2013). Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect.
Chicago Style CitationGao, Bin, et al. Improvement of Endurance Degradation for Oxide Based Resistive Switching Memory Devices Correlated With Oxygen Vacancy Accumulation Effect. 2013.
MLA CitationGao, Bin, et al. Improvement of Endurance Degradation for Oxide Based Resistive Switching Memory Devices Correlated With Oxygen Vacancy Accumulation Effect. 2013.
Warning: These citations may not always be 100% accurate.