3–10 GHz self-biased resistive-feedback LNA with inductive source degeneration
A 3-10 GHz self-biased low-noise amplifier (LNA) implemented in Global Foundries 65 nm CMOS process is presented. A novel input-matching network employing the resistive feedback and inductive source degeneration techniques is proposed to achieve the wideband matching as well as low noise figure. The...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/102384 http://hdl.handle.net/10220/16519 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |
| id |
sg-ntu-dr.10356-102384 |
|---|---|
| record_format |
dspace |
| spelling |
sg-ntu-dr.10356-1023842020-03-07T14:00:33Z 3–10 GHz self-biased resistive-feedback LNA with inductive source degeneration Sui, W. Q. Lu, Zhenghao Lim, Wei Meng Feng, Chen Yu, Xiao Peng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering A 3-10 GHz self-biased low-noise amplifier (LNA) implemented in Global Foundries 65 nm CMOS process is presented. A novel input-matching network employing the resistive feedback and inductive source degeneration techniques is proposed to achieve the wideband matching as well as low noise figure. The LNA exhibits a power gain of 17 - 1 dB over 3-10 GHz with noise figure ranging from 3.5 to 4.3 dB. The fabricated LNA occupies an area of 0.15 mm2 and draws 12 mA from 1.2 V power supply. 2013-10-16T04:35:52Z 2019-12-06T20:54:09Z 2013-10-16T04:35:52Z 2019-12-06T20:54:09Z 2013 2013 Journal Article Feng, C., Yu, X. P., Lu, Z. H., Lim, W. M., & Sui, W. Q. (2013). 3–10 GHz self-biased resistive-feedback LNA with inductive source degeneration. Electronics letters, 49(6), 387-388. 0013-5194 https://hdl.handle.net/10356/102384 http://hdl.handle.net/10220/16519 10.1049/el.2012.4472 en Electronics Letters |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| country |
Singapore |
| collection |
DR-NTU |
| language |
English |
| topic |
DRNTU::Engineering::Electrical and electronic engineering |
| spellingShingle |
DRNTU::Engineering::Electrical and electronic engineering Sui, W. Q. Lu, Zhenghao Lim, Wei Meng Feng, Chen Yu, Xiao Peng 3–10 GHz self-biased resistive-feedback LNA with inductive source degeneration |
| description |
A 3-10 GHz self-biased low-noise amplifier (LNA) implemented in Global Foundries 65 nm CMOS process is presented. A novel input-matching network employing the resistive feedback and inductive source degeneration techniques is proposed to achieve the wideband matching as well as low noise figure. The LNA exhibits a power gain of 17 - 1 dB over 3-10 GHz with noise figure ranging from 3.5 to 4.3 dB. The fabricated LNA occupies an area of 0.15 mm2 and draws 12 mA from 1.2 V power supply. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Sui, W. Q. Lu, Zhenghao Lim, Wei Meng Feng, Chen Yu, Xiao Peng |
| format |
Article |
| author |
Sui, W. Q. Lu, Zhenghao Lim, Wei Meng Feng, Chen Yu, Xiao Peng |
| author_sort |
Sui, W. Q. |
| title |
3–10 GHz self-biased resistive-feedback LNA with inductive source degeneration |
| title_short |
3–10 GHz self-biased resistive-feedback LNA with inductive source degeneration |
| title_full |
3–10 GHz self-biased resistive-feedback LNA with inductive source degeneration |
| title_fullStr |
3–10 GHz self-biased resistive-feedback LNA with inductive source degeneration |
| title_full_unstemmed |
3–10 GHz self-biased resistive-feedback LNA with inductive source degeneration |
| title_sort |
3–10 ghz self-biased resistive-feedback lna with inductive source degeneration |
| publishDate |
2013 |
| url |
https://hdl.handle.net/10356/102384 http://hdl.handle.net/10220/16519 |
| _version_ |
1681047843514613760 |