Quadratic to linear magnetoresistance tuning in TmB 4

Quadratic to linear magnetoresistance tuning in TmB 4

The change of a material's electrical resistance (R) in response to an external magnetic field (B) provides subtle information for the characterization of its electronic properties and has found applications in sensor and storage related technologies. In good metals, Boltzmann's theory pre...

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Bibliographic Details
Main Authors: Mitra, Sreemanta, Kang, Jeremy Goh Swee, Shin, John, Ng, Jin Quan, Sunku, Sai Swaroop, Kong, Tai, Canfield, Paul C., Shastry, B. Sriram, Sengupta, Pinaki, Panagopoulos, Christos
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2019
Subjects:
DRNTU::Science::Physics
Anisotropic Magnetoresistance
Magnetotransport
Online Access:https://hdl.handle.net/10356/102642
http://hdl.handle.net/10220/47775
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/102642
http://hdl.handle.net/10220/47775

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