Nonvolatile CBRAM-crossbar-based 3-D-integrated hybrid memory for data retention

• المؤلفون الرئيسيون: Wang, Yuhao, Yu, Hao, Zhang, Wei
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Engineering::Computer science and engineering::Data
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/102813; http://hdl.handle.net/10220/19987

This paper explores the design of 3-D-integrated hybrid memory by conductive-bridge random-access-memory (CBRAM). Considering internal states, height, and radius of the conductive bridge of one CBRAM device, an accurate CBRAM device model is developed for CBRAM-crossbar-based nonvolatile memory desi...