Design of low power 3D hybrid memory by non-volatile CBRAM-crossbar with block-level data-retention

• المؤلفون الرئيسيون: Wang, Yuhao, Zhang, Chun, Yu, Hao, Zhang, Wei
• مؤلفون آخرون: School of Computer Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2013
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/98317; http://hdl.handle.net/10220/12366

As one of the newly introduced resistive random access memory (ReRAM) devices, this paper has shown an in-depth study of conductive-bridging random access memory (CBRAM) for non-volatile memory (NVM) computing. Firstly, a CBRAM-crossbar based memory is evaluated with accurate physical-level model an...